Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates-Reference-Cited by-同舟云学术

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Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Published:1998-06 Issue:3 Volume:54 Page:207-209
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Narayanan V,Sukidi N,Hu Chimin,Dietz N,Bachmann K.J,Mahajan S,Shingubara S

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference9 articles.

1. MOCVD growth and characterization of GaP on Si

2. Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical‐vapor deposition

3. The formation mechanism of planar defects in compound semiconductors grown epitaxially on {100} silicon substrates

4. Growth and Characterization of Si-GaP and Si-GaP-Si Heterostructures

5. Migration-enhanced pulsed chemical beam epitaxy of GaP on Si(001)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells;Coatings;2021-03-30

2. Characterization of the Microstructure of GaP Films Grown on {111} Si by Liquid Phase Epitaxy;ACS Applied Materials & Interfaces;2014-10-27

3. Photoelectrochemical Behavior of Planar and Microwire-Array Si|GaP Electrodes;Advanced Energy Materials;2012-06-15

4. Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si;Journal of Crystal Growth;2008-07

5. Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing;Journal of Crystal Growth;2006-07

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