Formation of planar defects in the epitaxial growth of GaP on Si substrate by metal organic chemical‐vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.341280
Reference21 articles.
1. TEM and SEM Studies of MOCVD-Grown GaP on Si
2. Initial stages of epitaxial growth of GaAs on (100) silicon
3. Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition
4. One-dimensional dislocations. I. Static theory
5. Crystal Interfaces. Part I. Semi‐Infinite Crystals
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