Zinc-blende group III-V/group IV epitaxy: Importance of the miscut
Author:
Funder
Agence Nationale de la Recherche
Région Bretagne
Publisher
American Physical Society (APS)
Subject
Physics and Astronomy (miscellaneous),General Materials Science
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.4.053401/fulltext
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1. III–V multijunction solar cells for concentrating photovoltaics
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3. Electrically pumped continuous-wave 13 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si
4. Mid-infrared laser diodes epitaxially grown on on-axis (001) silicon
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