Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates-Reference-Cited by-同舟云学术

Photoelectrode/electrolyte interfacial band lineup engineering with alloyed III–V thin films grown on Si substrates

Published:2024 Issue:3 Volume:12 Page:1091-1097
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Piriyev Mekan¹,Loget Gabriel²^ORCID,Léger Yoan¹^ORCID,Le Hanh Vi³,Chen Lipin¹³,Létoublon Antoine¹^ORCID,Rohel Tony¹,Levallois Christophe¹^ORCID,Le Pouliquen Julie¹,Fabre Bruno²^ORCID,Bertru Nicolas¹^ORCID,Cornet Charles¹^ORCID

Affiliation:

1. Univ Rennes, INSA Rennes, CNRS, Institut FOTON – UMR 6082, F-35000 Rennes, France

2. Univ Rennes, CNRS, ISCR (Institut des Sciences Chimiques de Rennes)–UMR6226, F-35000 Rennes, France

3. Tianjin Key Laboratory of Film, Electronic and Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin 300384, China

Abstract

In this work, we demonstrate how the classical concept of band gap engineering usually used in III–V semiconductor devices can be extended to the engineering of the band lineup between semiconducting photoelectrodes and electrolytes.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D3TC02556J

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