Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy-Reference-Cited by-同舟云学术

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Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy

Published:2020-09-21 Issue:12 Volume:117 Page:122102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Blumer Zak H.¹^ORCID,Boyer Jacob T.¹^ORCID,Blumer Ari N.¹²^ORCID,Lepkowski Daniel L.³^ORCID,Grassman Tyler J.¹²³^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Center for Electron Microscopy and Analysis, The Ohio State University, Columbus, Ohio 43212, USA

3. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

National Science Foundation

National Aeronautics and Space Administration

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0021493

Reference39 articles.

1. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

2. Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

3. Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing

4. Generation and suppression process of crystalline defects in GaP layers grown on misoriented Si(100) substrates

5. Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

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