A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD
Author:
Affiliation:
1. Fundamentals of Energy Materials, Institute of Physics, Technische Universität Ilmenau, Ilmenau, Thuringia 98693, Germany
2. Fraunhofer Institute for Solar Energy Systems ISE, Freiburg 79110, Germany
Funder
Bundesministerium f??r Bildung und Forschung
Deutsche Forschungsgemeinschaft
Grantov?? Agentura ??esk?? Republiky
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00410
Reference71 articles.
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4. Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3% AM1.5g Efficiency
5. Lepkowski, D. L.; Boyer, J. T.; Yi, C.; Soeriyadi, A. H.; Blumer, Z. H.; Juhl, M. K.; Derkacs, D.; Kerestes, C.; Stavrides, A.; Mehrvarz, H.; Ho-Baillie, A. W. Y.; Bremner, S.; Ringel, S. A.; Grassman, T. J. Loss Analysis and Design Strategies Enabling >23% GaAsP/Si Tandem Solar Cells. Conference Record of the IEEE Photovoltaic Specialists Conference, June 2020; pp 1884–1886.
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1. Coalescence of GaP on V-Groove Si Substrates;ACS Applied Electronic Materials;2023-02-16
2. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy;Journal of Semiconductors;2022-12-01
3. MOCVD surface preparation of V-groove Si for III-V growth;Journal of Crystal Growth;2022-11
4. Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density;Journal of Applied Physics;2021-12-28
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