MOCVD surface preparation of V-groove Si for III-V growth-Reference-Cited by-同舟云学术

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MOCVD surface preparation of V-groove Si for III-V growth

Published:2022-11 Issue: Volume:597 Page:126843
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saenz Theresa E.^ORCID,Nandy Manali^ORCID,Paszuk Agnieszka,Ostheimer David,Koch Juliane,McMahon William E.,Zimmerman Jeramy D.^ORCID,Hannappel Thomas^ORCID,Warren Emily L.^ORCID

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Epitaxial GaInP/GaAs/Si triple-junction solar cell with 25.9% AM1.5g efficiency enabled by transparent metamorphic AlxGa1−xAsyP1−y step-graded buffer structures;Feifel;Sol. RRL,2021

2. 23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations;Lepkowski;Sol. Energy Mater. Sol. Cells,2021

3. Current-matched III–V/Si epitaxial tandem solar cells with 25.0% efficiency;Fan;Cell Rep. Phys. Sci.,2020

4. Novel light source integration approaches for silicon photonics;Wang;Laser Photonics Rev.,2017

5. Polar-on-nonpolar epitaxy;Kroemer;J. Crys. Growth,1987

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coalescence of GaP on V-Groove Si Substrates;ACS Applied Electronic Materials;2023-02-16

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