23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations-Reference-Cited by-同舟云学术

23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations

Published:2021-09 Issue: Volume:230 Page:111299
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Lepkowski Daniel L.^ORCID,Grassman Tyler J.^ORCID,Boyer Jacob T.,Chmielewski Daniel J.,Yi Chuqi^ORCID,Juhl Mattias K.,Soeriyadi Anastasia H.^ORCID,Western Ned^ORCID,Mehrvarz Hamid,Römer Udo^ORCID,Ho-Baillie Anita^ORCID,Kerestes Christopher,Derkacs Daniel,Whipple Steven G.,Stavrides Alex P.^ORCID,Bremner Stephen P.,Ringel Steven A.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference44 articles.

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2. Current-matched III–V/Si epitaxial tandem solar cells with 25.0% efficiency;Fan;Cell Rep. Phys. Sci.,2020

3. Toward >25% Efficient Monolithic Epitaxial GaAsP/Si Tandem Solar Cells;Grassman,2019

4. GaAs0.75P0.25/Si dual-junction solar cells grown by MBE and MOCVD;Grassman;IEEE J. Photovolt.,2016

5. Direct growth of III–V/silicon triple-junction solar cells with 19.7% efficiency;Feifel;IEEE J. Photovolt,2018

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