Characterization of the Microstructure of GaP Films Grown on {111} Si by Liquid Phase Epitaxy-Reference-Cited by-同舟云学术

Characterization of the Microstructure of GaP Films Grown on {111} Si by Liquid Phase Epitaxy

Published:2014-10-27 Issue:21 Volume:6 Page:18626-18634
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Huang Susan R.¹,Lu Xuesong²,Barnett Allen²,Opila Robert L.¹,Mogili Vishnu,Tanner David A.,Nakahara Shohei

Affiliation:

1. Department of Materials Science and Engineering, 201 DuPont Hall, University of Delaware, Newark, Delaware 19716, United States

2. Department of Electrical and Computer Engineering, 140 Evans Hall, University of Delaware, Newark, Delaware 19716, United States

Funder

Defense Advanced Research Projects Agency

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am503448g

Reference22 articles.

1. Astles, M. G.Liquid-Phase Epitaxial Growth of III-V Compound Semiconductor Materials and their Device Applications;Adam Hilger:New York, 1990; pp2–3.

2. Heteroepitaxial growth of gallium phosphide on silicon

3. Growth of antiphase-domain-free GaP on Si by organometallic vapor phase epitaxy

4. Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

5. Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

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