Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing-Reference-Cited by-同舟云学术

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Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing

Published:2006-07 Issue:1 Volume:293 Page:5-13
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dixit V.K.,Ganguli Tapas,Sharma T.K.,Kumar Ravi,Porwal S.,Shukla Vijay,Ingale Alka,Tiwari Pragya,Nath A.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Electrical and optical properties of GaP grown on Si by MOVPE

2. Growth mechanism of GaP on Si substrate by MOVPE

3. Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

4. Semiconductor and semimetal;Meyer;Silicon Epitaxy,2001

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1. Effect of germanium auto-diffusion on the bond lengths of Ga and P atoms in GaP/Ge(111) investigated by using X-ray absorption spectroscopy;Journal of Synchrotron Radiation;2021-01-28

2. Self-healing gallium phosphide embedded in a hybrid matrix for high-performance Li-ion batteries;Energy Storage Materials;2021-01

3. III–V ternary nanowires on Si substrates: growth, characterization and device applications;Journal of Semiconductors;2019-10-01

4. Monolithic III/V integration on (001) Si substrate;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

5. Anisotropic distribution of microstructure in compressively strained InP/GaAs epitaxial layers;Superlattices and Microstructures;2018-10

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