Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si-Reference-Cited by-同舟云学术

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Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si

Published:2008-07 Issue:15 Volume:310 Page:3428-3435
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dixit V.K.,Ganguli Tapas,Sharma T.K.,Singh S.D.,Kumar Ravi,Porwal S.,Tiwari Pragya,Ingale Alka,Oak S.M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Growth mechanism of GaP on Si substrate by MOVPE

2. A ‘bed of nails’ on silicon

3. Epitaxial III−V Nanowires on Silicon

4. The interface electronic states and valence band offsets of the Si/GaP heterojunction

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2. Identification and control of crystalline nuclei facets imparting to the breaking of symmetry selection rules of optical phonon modes in GaP/Si (001);Surfaces and Interfaces;2024-01

3. Estimation of Asymmetrically Distributed Anti-phase Domains Ratio in GaAs/Si(100) Epitaxial Layers Using High Resolution X-Ray Diffraction;Springer Proceedings in Physics;2024

4. Elucidating the interfacial nucleation of higher-index defect facets in technologically important GaP/Si(0 0 1) by azimuthal angle-resolved polarized Raman spectroscopy;Applied Surface Science;2021-07

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