Elucidating the interfacial nucleation of higher-index defect facets in technologically important GaP/Si(0 0 1) by azimuthal angle-resolved polarized Raman spectroscopy-Reference-Cited by-同舟云学术

Elucidating the interfacial nucleation of higher-index defect facets in technologically important GaP/Si(0 0 1) by azimuthal angle-resolved polarized Raman spectroscopy

Published:2021-07 Issue: Volume:554 Page:149620
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Aggarwal R.,Ingale Alka A.^ORCID,Dixit V.K.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference43 articles.

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