Effective defect entrainment in lamp zone melting of Si films on insulator
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Microanalysis of single‐crystal Si recrystallized using halogen lamps
2. Use of selective annealing for growing very large grain silicon on insulator films
3. Solidification‐Front Modulation to Entrain Subboundaries in Zone‐Melting Recrystallization of Si on SiO2
4. Localisation of defects on SOI films via selective recrystallisation using halogen lamps
5. Improved heat-sink structure providing single-crystal soi films prepared by lamp zone melting
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electrical Characteristics of Thin-Film Transistors with Double-Active-Layer Structure;Japanese Journal of Applied Physics;1995-02-15
2. Grain growth of laser-recrystallized polycrystalline and amorphous silicon films;Thin Solid Films;1994-09
3. Defect-free silicon film on SiO/sub 2/ formed by zone melting recrystallization with high scanning speed;IEEE Transactions on Electron Devices;1990-04
4. Zone Melting Recrystallization of Thin Si Films: Effect of Relief in the SiO2 Cap;Journal of The Electrochemical Society;1989-09-01
5. High‐speed video observation of laser recrystallization for semiconductor‐on‐insulator fabrication;Journal of Applied Physics;1989-01-15
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