Improved heat-sink structure providing single-crystal soi films prepared by lamp zone melting
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference19 articles.
1. Proc. MRS Europe;Haond,1985
2. Microanalysis of single‐crystal Si recrystallized using halogen lamps
3. Effects of subgrain boundaries on carrier transport in zone-melting-recrystallized Si films on SiO2-coated Si substrates
4. Electrical properties of halogen lamp recrystallized silicon films on SiO2
5. Field effect in large grain polycrystalline silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates;Japanese Journal of Applied Physics;1993-07-15
2. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
3. Effective defect entrainment in lamp zone melting of Si films on insulator;Journal of Crystal Growth;1986-12
4. Electrical Characterization of Beam—Recrystallized Soi Structures Using a Depletion Mode Transistor;MRS Proceedings;1985
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