Microanalysis of single‐crystal Si recrystallized using halogen lamps
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332561
Reference9 articles.
1. Improved techniques for growth of large‐area single‐crystal Si sheets over SiO2using lateral epitaxy by seeded solidification
2. Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
3. Cellular growth in micro-zone melted silicon
4. Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates
5. Use of incoherent light for annealing implanted Si wafers and growing single-crystal Si on SiO2
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1. Rapid thermal and large area processing of thin films with a line electron beam;Applied Surface Science;1993-05
2. Subgrain Boundaries Structure in ZMR Si(001);Journal of The Electrochemical Society;1992-10-01
3. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
4. Determination of crystallographic orientations in silicon films by Raman‐microprobe polarization measurements;Journal of Applied Physics;1989-04
5. Generation and electrical characterization of thick SOI films;Applied Surface Science;1989-01
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