Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93112
Reference6 articles.
1. Single Crystal Silicon‐on‐Oxide by a Scanning CW Laser Induced Lateral Seeding Process
2. Lateral epitaxy by seeded solidification for growth of single‐crystal Si films on insulators
3. Improved techniques for growth of large‐area single‐crystal Si sheets over SiO2using lateral epitaxy by seeded solidification
4. Single‐crystal Si films on SiO2prepared by using a stationary graphite heater for lateral epitaxy by seeded solidification
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2. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
3. Defect-free silicon film on SiO/sub 2/ formed by zone melting recrystallization with high scanning speed;IEEE Transactions on Electron Devices;1990-04
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