Localisation of defects on SOI films via selective recrystallisation using halogen lamps
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19830316?crawler=true&mimetype=application/pdf
Reference12 articles.
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low frequency noise investigations for evaluation of silicon-on-insulator films obtained by zone-melting recrystallization;Materials Science and Engineering: B;1993-03
2. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
3. Zone Melting Recrystallization of Thin Si Films: Effect of Relief in the SiO2 Cap;Journal of The Electrochemical Society;1989-09-01
4. Effective defect entrainment in lamp zone melting of Si films on insulator;Journal of Crystal Growth;1986-12
5. Characterization and entrainment of subboundaries and defect trails in zone‐melting‐recrystallized Si films;Journal of Applied Physics;1986-08
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