Real-time monolayer growth oscillations detected by RD at pressures up to LP-MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Rheed Measurement and Chemical Kinetics of Chemical Beam Epitaxial growth of GaAs
2. Reflectance-Difference Spectroscopy: A New Look At Semiconductor Crystal Growth By MBE And OMCVD
3. Effects of pressure and temperature on RD detected growth oscillations
4. Insituinvestigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
5. Reflectance-difference studies of organometallic chemical-vapor-deposition growth transients on (001) GaAs
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1. Surface Kinetics and Applications in Process Control, Reflectance Anisotropy Spectroscopy Studies of;Encyclopedia of Materials: Science and Technology;2001
2. Growth and in situ monitoring of GaN using IR interference effects;Journal of Crystal Growth;1998-12
3. Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry;Progress in Crystal Growth and Characterization of Materials;1997-01
4. Reflection;Optical Diagnostics for Thin Film Processing;1996
5. Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001);Physica Status Solidi (a);1995-11-16
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