Characterization of epitaxial semiconductor growth by reflectance anisotropy spectroscopy and ellipsometry
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference120 articles.
1. Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
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5. Phase modulated ellipsometry from the ultraviolet to the infrared: In situ application to the growth of semiconductors
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