Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)-Reference-Cited by-同舟云学术

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Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE)

Published:2023-02 Issue: Volume:611 Page:155769
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Oliveira Emerson,Strassner Johannes,Doering Christoph,Fouckhardt Henning

Funder

Technische Universität Kaiserslautern

Deutsche Forschungsgemeinschaft

National Science Council

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference36 articles.

1. A survey on the reactive ion etching of silicon in microtechnology;Jansen;J. Micromech. Microeng.,1996

2. Reactive ion etching induced damage evaluation for optoelectronic device fabrication;Morello;J. Vac. Sci. Technol. B Microelectron. Nanom. Struct.,2006

3. Gate transistor;Wickstrom;IEEE Trans. Elect. Devices.,1967

4. Advanced deep reactive ion etching: a versatile tool for microelectromechanical systems;Clerc;J. Micromech. Microeng.,1998

5. The description of friction of silicon MEMS with surface roughness: virtues and limitations of a stochastic Prandtl-Tomlinson model and the simulation of vibration-induced friction reduction;van Spengen;Beilstein J. Nanotechnol.,2010

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