Reactive ion etching induced damage evaluation for optoelectronic device fabrication-Reference-Cited by-同舟云学术

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Reactive ion etching induced damage evaluation for optoelectronic device fabrication

Published:2006 Issue:2 Volume:24 Page:756
ISSN:1071-1023
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:en
Short-container-title:J. Vac. Sci. Technol. B

Author:

Morello G.,Quaglio M.,Meneghini G.,Papuzza C.,Kompocholis C.

Publisher

American Vacuum Society

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reflectance anisotropy spectroscopy (RAS) for in-situ identification of roughness morphologies evolving during reactive ion etching (RIE);Applied Surface Science;2023-02

2. Mechanical stress in InP and GaAs ridges formed by reactive ion etching;Journal of Applied Physics;2020-12-14

3. Mechanical Stress in InP Structures Etched in an Inductively Coupled Plasma Reactor with Ar/Cl2/CH4 Plasma Chemistry;Journal of Electronic Materials;2018-02-26

4. Continuous-wave operation of a $(20\bar{2}\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture;Applied Physics Express;2015-03-06

5. Reliability of optoelectronics;Reliability Characterisation of Electrical and Electronic Systems;2015

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