Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)-Reference-Cited by-同舟云学术

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Reflectance anisotropy oscillations during MOCVD and MBE growth of GaAs (001)

Published:1995-11-16 Issue:1 Volume:152 Page:35-47
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Zettler J.-T.,Rumberg J.,Ploska K.,Stahrenberg K.,Pristovsek M.,Richter W.,Wassermeier M.,Schützendübe P.,Behrend J.,Däweritz L.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy

2. Dynamics of film growth of GaAs by MBE from Rheed observations

3. Observation and analysis of epitaxial growth with reflectance-difference spectroscopy

4. Surface processes before and during growth of GaAs (001)

5. , , , , , , and , accepted for publication in Surface Sci. (1995).

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