Insituinvestigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346365
Reference17 articles.
1. A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy
2. Raman investigations of reaction process in MOVPE
3. Above-bandgap optical anisotropies in cubic semiconductors: A visible–near ultraviolet probe of surfaces
4. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
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