Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment-Reference-Cited by-同舟云学术

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Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment

Published:2015-02 Issue: Volume:328 Page:120-124
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Barzen Lars,Richter Johannes,Fouckhardt Henning,Wahl Michael,Kopnarski Michael

Funder

Stiftung Rheinland-Pfalz fuer Innovation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference39 articles.

1. Application of reflectance difference spectroscopy to molecular-beam eiptaxy growth of GaAs and AlAs;Aspnes;J. Vac. Sci. Technol. A-Vacuum Surf. Films,1988

2. Optical reflectance measurements of transients during molecular-beam epitaxial-growth on (001) GaAs;Harbison;J. Vac. Sci. Technol. B,1988

3. Above-bandgap optical anisotropies in cubic semiconductors - a visible near ultraviolet probe of surfaces;Aspnes;J. Vac. Sci. Technol. B,1985

4. Optical-reflectance and electron-diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001);Aspnes;Phys. Rev. Lett.,1987

5. Anisotropies in the above band-gap optical-spectra of cubic semiconductors;Aspnes;Phys. Rev. Lett.,1985

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Terahertz Barcodes Enabled by All‐Silicon Metasurfaces for Process Control and Monitoring Applications;Advanced Materials Technologies;2023-02-03

2. Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle Component Analysis (PCA);Advances in Materials Science and Engineering;2022-11-11

3. Interferometric in-situ III/V semiconductor dry-etch depth-control with ±0.8 nm best accuracy using a quadruple-Vernier-scale measurement;Journal of Vacuum Science & Technology B;2021-09

4. Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS);Micromachines;2021-04-29

5. In-situ etch-depth control better than 5 nm with reflectance anisotropy spectroscopy (RAS) equipment during reactive ion etching (RIE): A technical RAS application;AIP Advances;2019-07

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