Growth and in situ monitoring of GaN using IR interference effects-Reference-Cited by-同舟云学术

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Growth and in situ monitoring of GaN using IR interference effects

Published:1998-12 Issue:1-4 Volume:195 Page:192-198
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Considine L.,Thrush E.J.,Crawley J.A.,Jacobs K.,Van der Stricht W.,Moerman I.,Demeester P.,Park G.H.,Hwang S.J.,Song J.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Study of GaN and InGaN films grown by metalorganic chemical vapour deposition

2. In SituMonitoring of GaN Growth Using Interference Effects

3. Anisotropies in the Above—Band-Gap Optical Spectra of Cubic Semiconductors

4. Surface science studies of MOVPE processes: a review of progress

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1. Epitaxial Systems for III‐V and III‐Nitride MOVPE;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30

2. In-situ Monitoring of GaN Epilayers by Spectral Reflectance;Journal of the Korean Vacuum Society;2011-09-30

3. In Situ Interferometry of MOCVD-Grown ZnO for Nucleation-Layer-Based Optimization and Nanostructure Formation Monitoring;Journal of Electronic Materials;2011-01-29

4. Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD;physica status solidi (c);2009-01-26

5. CLOSE-COUPLED SHOWERHEAD MOCVD TECHNOLOGY FOR THE EPITAXY OF GaN AND RELATED MATERIALS;III-Nitride Semiconductor Materials;2006-03

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