Effects of pressure and temperature on RD detected growth oscillations
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Heat transfer — a review of 1992 literature;International Journal of Heat and Mass Transfer;1994-06
2. Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001) GaAs;Journal of Crystal Growth;1994-03
3. Real‐time monitoring of the reaction of H2S on GaAs;Journal of Applied Physics;1993-11-15
4. On the effect of arsine for the decomposition of triethylgallium during epitaxial growth of GaAs;Journal of Crystal Growth;1993-10
5. Reflectance anisotropy as a surface science probe of the growth of InAs on (001) GaAs by molecular beam epitaxy;Applied Physics Letters;1993-07-26
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