Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001) GaAs-Reference-Cited by-同舟云学术

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Reflection high energy electron diffraction and reflectance difference studies of surface anisotropy in InGaAs chemical beam epitaxy on flat and vicinal (001) GaAs

Published:1994-03 Issue:1-4 Volume:136 Page:78-82
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Junno B.,Paulsson G.,Miller M.,Samuelson L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. CBE growth of (001) GaAs: RHEED and RD studies

2. Optical studies of molecular-beam epitaxy growth of GaAs and AlAs

3. Optical detection of growth oscillations in high vacuum metalorganic vapor phase epitaxy

4. Effects of pressure and temperature on RD detected growth oscillations

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RHEED characterization of InAs/GaAs grown by MBE;Journal of Crystal Growth;1999-02

2. Physical Processes Occurring on the Surface;Organometallic Vapor-Phase Epitaxy;1999

3. Effects of Ga and As desorption on the chemical beam epitaxy growth of (001) GaAs as measured by reflection high energy electron diffraction;Journal of Applied Physics;1998-04-15

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