RHEED characterization of InAs/GaAs grown by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. MBE as a production technology for HEMT LSIs
2. GaAs–Alx Ga1−x As double‐heterostructure lasers prepared by molecular‐beam epitaxy
3. 10- mu m GaAs/AlGaAs multiquantum well scanned array infrared imaging camera
4. Application of frequency-domain analysis to RHEED oscillation data: time dependence of AlGaAs growth rates
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2. Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique;Journal of Materials Science;2004-04
3. Raman spectroscopic studies of InAs epilayers grown on the GaAs (001) substrates;Journal of Crystal Growth;2003-06
4. Strain relaxation of InAs epilayer on GaAs under In-rich conditions;Journal of Materials Science Letters;2003
5. Evolution of island–pit surface morphologies of InAs epilayers grown on GaAs (001) substrates;Journal of Applied Physics;2001-04
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