Application of frequency-domain analysis to RHEED oscillation data: time dependence of AlGaAs growth rates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference3 articles.
1. Frequency-domain analysis of time-dependent reflection high-energy electron diffraction intensity data
2. Multiple reflection high‐energy electron diffraction beam intensity measurement system
3. Reflection high-energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. RHEED characterization of InAs/GaAs grown by MBE;Journal of Crystal Growth;1999-02
2. Nucleation and growth kinetics of GaAs during molecular beam epitaxy;Surface Science;1994-07
3. The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS;Journal of Crystal Growth;1992-02
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