The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS-Reference-Cited by-同舟云学术

The temperature dependent variation of bulk and surface composition of InxGa1−xAs on GaAs grown by chemical beam epitaxy studied by RHEED, X-ray diffraction and XPS

Published:1992-02 Issue:3-4 Volume:116 Page:271-282
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hansen H.S.,Bensaoula A.,Tougaard S.,Ignatiev A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Interesting aspects of reflection high-energy electron diffraction oscillations during growth of GaAs(100)

2. Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)

3. [4] J.S. Resh, K.D. Jamison, J. Strozier, A. Bensaoula and A. Ignatiev, to be published.

4. A comparative study of the interaction kinetics of As2 and As4 molecules with Ga-rich GaAs (001) surfaces

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