Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures-Reference-Cited by-同舟云学术

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Observation of indium segregation effects in structural and optical properties of pseudomorphic HEMT structures

Published:2005-12-21 Issue:2 Volume:21 Page:131-137
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mishra Puspashree,Ramesh V,Srinivasan T,Singh S N,Goyal Anshu,Sharma R K,Muralidharan R

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Overview of recent development of HEMTs in the mm-wave range

2. Improved source resistance in InP-based enhancement-mode HEMTs for high speed digital applications

3. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures

4. Characterisation of molecular beam epitaxy-grown InGaAs multilayer structures using photoluminescence

5. GROWTH AND CHARACTERIZATION OF P-HEMT STRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The evolution of indium precipitation in gallium focused ion beam prepared samples of InGaAs/InAlAs quantum wells under electron beam irradiation;Journal of Microscopy;2023-12-26

2. Interface engineered MBE grown InAs/GaSb based type-II superlattice heterostructures;Journal of Alloys and Compounds;2021-12

3. Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy;Semiconductor Science and Technology;2014-01-30

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