Phase of reflection high-energy electron-diffraction intensity oscillations during molecular-beam-epitaxy growth of GaAs(100)
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.40.11799/fulltext
Reference10 articles.
1. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
2. Dynamics of film growth of GaAs by MBE from Rheed observations
3. Current understanding and applications of the RHEED intensity oscillation technique
4. Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAs
5. The dependence of RHEED oscillations on MBE growth parameters
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