Effects of Ga and As desorption on the chemical beam epitaxy growth of (001) GaAs as measured by reflection high energy electron diffraction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367213
Reference11 articles.
1. Thermodynamic aspects of molecular beam epitaxy: High temperature growth in the GaAs/Ga1−xAlxAs system
2. Mass‐action control of AlGaAs and GaAs growth in molecular beam epitaxy
3. Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
4. A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
5. Gallium‐ and arsenic‐induced oscillations of intensity of reflection high‐energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy
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