A model for the surface chemical kinetics of GaAs deposition by chemical‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342508
Reference29 articles.
1. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
2. Oscillations in the surface structure of Sn-doped GaAs during growth by MBE
3. RED intensity oscillations during MBE of GaAs
4. Temporal intensity variations in RHEED patterns during film growth of GaAs by MBE
5. Damped oscillations in reflection high energy electron diffraction during GaAs MBE
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