Temporal intensity variations in RHEED patterns during film growth of GaAs by MBE
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
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3. Molecular beam epitaxy of III-P x As1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element;Semiconductors;2015-02
4. Mass transport on adsorbate multilayers studied by surface plasmon polariton wave excitation;Solid State Communications;2011-12
5. Influence of the structural surface state on the formation of a relief and morphology of GaAs(001) layers during molecular-beam epitaxy and vacuum annealing;Russian Physics Journal;2008-09
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