In-situ monitoring of antiphase domain evolution during atomic layer MBE (ALMBE) and MBE growth of GaAs/Si(001) by reflectance difference
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Sublattice allocation and antiphase domain suppression in polar-on-nonpolar nucleation
2. The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
3. In SituReflectance Anysotropy Monitoring of Antiphase Domains Evolution during Growth of GaAs/Si (001)
4. Optical reflectance and electron diffraction studies of molecular-beam-epitaxy growth transients on GaAs(001)
5. Application of Reflectance Difference Spectroscopy (RDS) to Migration-Enhanced Epitaxy (MEE) Growth of GaAs
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