Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates-Reference-Cited by-同舟云学术

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Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Published:2013-09 Issue: Volume:378 Page:25-28
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nguyen Thanh T.,Robert C.,Giudicelli E.,Létoublon A.,Cornet C.,Ponchet A.,Rohel T.,Balocchi A.,Micha J.S.,Perrin M.,Loualiche S.,Marie X.,Bertru N.,Durand O.,Le Corre A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Gallium arsenide and other compound semiconductors on silicon

2. III–V epitaxy on Si for photonics applications

3. First step to Si photonics: synthesis of quantum dot light-emitters on GaP substrate by MBE

4. GaP-nucleation on exact Si (001) substrates for III/V device integration

5. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III–V monolithic integration on silicon;Journal of Applied Crystallography;2019-07-24

2. Impact of temperature and nitrogen composition on the growth of GaAsPN alloys;Journal of Crystal Growth;2018-03

3. Abrupt GaP/Si hetero-interface using bistepped Si buffer;Applied Physics Letters;2015-11-09

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