Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Carbon diffusion in undoped,n‐type, andp‐type GaAs
2. Carbon doping of III–V compounds grown by MOMBE
3. Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors
4. Highly carbon‐dopedp‐type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas‐source molecular beam epitaxy
5. Growth of heavy carbon‐doped GaInAs lattice matched to InP by chemical beam epitaxy
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1. Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers;Journal of Crystal Growth;2024-10
2. Carbon doping in InGaAsSb films on (001) InP substrate using CBr4 grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;2013-10
3. Influence of Built-In Drift Fields on the Performance of InP-Based HBTs Grown by Solid-Source MBE;IEEE Transactions on Electron Devices;2012-07
4. Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers;Applied Physics Letters;2005-06-20
5. Carbon-doped InP∕In[sub 0.53]Ga[sub 0.47]As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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