Growth of heavy carbon‐doped GaInAs lattice matched to InP by chemical beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111344
Reference14 articles.
1. Carbon doping of III–V compounds grown by MOMBE
2. Carbon incorporation in MOMBE-grown Ga0.47In0.53As
3. Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy
4. Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy
5. P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy
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1. Heavily carbon-doped p-type InGaAs grown by gas source molecular beam epitaxy for application to heterojunction bipolar transistors;Journal of Crystal Growth;2007-04
2. Carbon-doped InP∕In[sub 0.53]Ga[sub 0.47]As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
3. Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs;IEEE Transactions on Electron Devices;2002
4. Metalorganic Vapour Phase Epitaxy Growth of InP-based Heterojunction Bipolar Transistors with Carbon Doped InGaAs Base Using Tertiarybutylarsine and Tertiarybutylphosphine in N2Ambient;Japanese Journal of Applied Physics;2000-11-15
5. Tunable Schottky barrier contacts to In[sub x]Ga[sub 1−x]As;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
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