Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107336
Reference18 articles.
1. GaAs growth in metal–organic MBE
2. Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
3. Carbon doping of III–V compounds grown by MOMBE
4. Abruptp‐type doping profile of carbon atomic layer doped GaAs grown by flow‐rate modulation epitaxy
5. Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy
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1. The grain boundary and alloy-based system to calculate lattice thermal conductivity in InAs/GaAs multi-layered superlattices;International Journal of Modern Physics B;2024-09-12
2. Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers;Journal of Crystal Growth;2013-05
3. Thermal Stability of p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2-xSex Thermoelectric Superlattice Thin Film Devices;MRS Proceedings;2003
4. Carbon‐dopedp‐type AlGaAs/InAs superalloy by metalorganic chemical‐vapor deposition;Journal of Applied Physics;1996-01
5. Using Gaseous Sources in Molecular Beam Epitaxy;Devices Based on Low-Dimensional Semiconductor Structures;1996
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