Highly p-typed superlattices consist of undoped InAs and carbon-doped GaAs layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
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2. Low-base-resistance InP/InGaAs heterojunction bipolar transistors with a compositionally graded-base structure
3. Growth and characterization of p-type InGaAs on InP substrates by LP-MOVPE using a new carbon-dopant source, CBrCl3
4. A. Koizumi, K. Oshitanai, J. Lee, K. Uchida, S. Nozaki, MRS Proceedings 2009 1195 1195-B06-02, 2011.
5. Application of InGaAs/GaAs superlattice-base structure for InGaP/GaAs superlattice-emitter bipolar transistor
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carbon n-δ-doping effects on electronic and optical properties in GaAs/AlGaAs HEMTs;Superlattices and Microstructures;2014-08
2. Energy band‐gap shift with gamma-ray radiation and carbon n-delta-doping in GaAs/AlGaAs QWs structures;Physica B: Condensed Matter;2014-05
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