Thermal Stability of p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2-xSex Thermoelectric Superlattice Thin Film Devices

Abstract

ABSTRACTThermolectric devices have been constructed using Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2-xSex superlattice thin films. Since these devices are intended for use in systems that will operate at elevated temperatures over their lifetime as in many power conversion applications, thermal stability of the thermoelectric figure of merit is an important consideration. The ZTe of p-type and n-type superlattice thin film elements was evaluated at specific intervals during exposure to elevated temperatures of 150°C for up to 60 hrs. Results indicate that the figure of merit for p- and n-type superlattice films is not compromised over time when exposed to these operating temperatures. In fact, both p- and n-type superlattice thin film ZTe remains very constant or improves slightly when subjected to continuous exposure to elevated temperatures. Evaluation of these thin film thermoelements is reported and implications of these results are considered for thin film thermoelectric modules.