Carbon-doped InP∕In[sub 0.53]Ga[sub 0.47]As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy
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Published:2004
Issue:5
Volume:22
Page:2499
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ISSN:0734-211X
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Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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language:en
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Short-container-title:J. Vac. Sci. Technol. B
Author:
Zhang R.,Yoon S. F.,Tan K. H.,Lew K. L.,Sun Z. Z.
Publisher
American Vacuum Society
Subject
General Engineering