Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates;Journal of Vacuum Science & Technology B;2019-05
2. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015
3. Chemical beam epitaxy of AlAs using novel group-V precursors;Journal of Crystal Growth;2000-06
4. Energetics and hydrogen passivation of carbon-related defects in InAs andIn0.5Ga0.5As;Physical Review B;1996-04-15
5. A First-Priciples Study of Carbon Impurities in GaAs and InAs;Materials Science Forum;1995-11
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