A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. GaAs growth in metal–organic MBE
2. Chemical beam epitaxy of InP and GaAs
3. Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System
4. Epitaxial films grown by vacuum MOCVD
5. Extended Abstracts 16th Conf. on Solid State Devices and Materials;Kudou,1984
Cited by 187 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices;Japanese Journal of Applied Physics;2023-01-31
2. GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium;Journal of Applied Physics;2017-01-21
3. Design of a compact ultrahigh vacuum-compatible setup for the analysis of chemical vapor deposition processes;Review of Scientific Instruments;2014-10
4. The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration;Applied Surface Science;2014-04
5. Molecular beam epitaxy of complex oxides;Molecular Beam Epitaxy;2013
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3