GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium-Reference-Cited by-同舟云学术

GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium

Published:2017-01-21 Issue:3 Volume:121 Page:035704
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Molière T.¹²^ORCID,Jaffré A.²,Alvarez J.²,Mencaraglia D.²,Connolly J. P.²^ORCID,Vincent L.¹,Hallais G.¹,Mangelinck D.³,Descoins M.³,Bouchier D.¹,Renard C.¹

Affiliation:

1. Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N - Orsay, 91405 Orsay cedex, France

2. GeePs-Supelec, UMR CNRS 8507, Université Pierre et Marie Curie, Université Paris-Sud, 11 rue Joliot Curie, Plateau de Moulon, 91192 Gif sur Yvette, France

3. IM2NP, CNRS/Aix-Marseille Université, Faculté de saint Jérôme, Marseille, France

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4974538

Reference28 articles.

1. Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

2. High gain AlGaAs∕GaAs heterojunction bipolar transistor fabricated on SiGe∕Si substrate

3. III-V/Si hybrid photonic devices by direct fusion bonding

4. Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapour deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate

5. GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

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