III-V/Si hybrid photonic devices by direct fusion bonding
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep00349.pdf
Reference48 articles.
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3. Palit, S. et al. Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features. Opt. Lett. 34, 2802–2804 (2009).
4. Tanabe, K., Nomura, M., Guimard, D., Iwamoto, S. & Arakawa, Y. Room temperature continuous wave operation of InAs/GaAs quantum dot photonic crystal nanocavity laser on silicon substrate. Opt. Express 17, 7036–7042 (2009).
5. Tanabe, K., Guimard, D., Bordel, D., Iwamoto, S. & Arakawa, Y. Electrically pumped 1.3 μm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer. Opt. Express 18, 10604–10608 (2010).
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