Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence-Reference-Cited by-同舟云学术

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Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence

Published:2017-10-23 Issue:11 Volume:17 Page:6667-6675
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Hung-Ling¹,Himwas Chalermchai¹,Scaccabarozzi Andrea¹²,Rale Pierre¹,Oehler Fabrice¹^ORCID,Lemaître Aristide¹,Lombez Laurent²³,Guillemoles Jean-François²³,Tchernycheva Maria¹,Harmand Jean-Christophe¹,Cattoni Andrea¹,Collin Stéphane¹²^ORCID

Affiliation:

1. Centre for Nanoscience and Nanotechnology, CNRS, University Paris-Sud/Paris-Saclay, 91460 Marcoussis, France

2. Institut Photovoltaïque d’Ile-de-France (IPVF), 92160 Antony, France

3. Institut de Recherche et Développement sur l’Energie Photovoltaïque (IRDEP) EDF/CNRS/ChimieParisTech, 78400 Chatou, France

Funder

Agence Nationale de la Recherche

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.7b02620

Reference63 articles.

1. Semiconductor nanowire lasers

2. Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors

3. Roadmap on optical energy conversion

4. Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell

5. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition

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5. Dual‐Gate GaAs‐Nanowire FET for Room Temperature Charge‐Qubit Operation: A NEGF Approach;Advanced Quantum Technologies;2023-02-10

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