Energetics and hydrogen passivation of carbon-related defects in InAs andIn0.5Ga0.5As-Reference-Cited by-同舟云学术

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Energetics and hydrogen passivation of carbon-related defects in InAs andIn0.5Ga0.5As

Published:1996-04-15 Issue:15 Volume:53 Page:9784-9790
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Lee Sun-Ghil,Chang K. J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.53.9784/fulltext

Reference29 articles.

1. GaAs growth in metal–organic MBE

2. Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium Sources

3. Characterization ofp‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxy

4. Carbon incorporation in MOMBE-grown Ga0.47In0.53As

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