Chemical beam epitaxial growth of high‐purity GaAs using triethylgallium and arsine
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98755
Reference11 articles.
1. Chemical beam epitaxy of InP and GaAs
2. Metalorganic CVD of GaAs in a molecular beam system
3. Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine
4. Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
5. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
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